Recent publications (2015 -- Present)

  1. Insights into the first sharp diffrection peak of amorphous silica from an analysis of chemical and radial ordering
    (P. Biswas, D. Dahal and S. R. Elliott)
    [Physical Review B 109, 104207 (2024)]

  2. Ab initio study of the structure of amorphous silicon hydride from accelerated molecular dynamics simulation
    (R. Atta-Fynn, S. J. Rathi, H. Arya and P. Biswas)
    (Journal of Noncrystalline Solids, September 2023)
    https://doi.org/10.1016/j.jnoncrysol.2023.12264

  3. Ab initio studies of the impact of the Debye-Waller factor on the structural and dynamical properties of amorphous semiconductors: The case of a-Si
    (D. Dahal, S. R. Elliott, and P. Biswas)
    [Physical Review B 108, 094206 (2023)]

  4. Extended-range order in tetrahedral amorphous semiconductors: The case of amorphous silicon
    (D. Dahal, S. R. Elliott, and P. Biswas)
    [Physical Review B 105, 115203 (2022)]

  5. Form and Function of Disorder: A Guest Editorial dedicated to Prof. David Drabold on the occasion of his 60th birthday
    (P. Biswas, G. Chen, S. Nakhmanson, and J. Dong)
    (Phys. Status Solidi B 2021, 200447)

  6. On the Origin and Structure of the First Sharp Ddiffraction Peak of Amorphous Silicon
    (D. Dahal, H. Warren and P. Biswas)
    (Phys. Status Solidi B 2021, 2000447)

  7. Ab Initio Hydrogen Dynamics and the Morphology of Voids in Amorphous Silicon
    (P. Biswas and D. Limbu)
    (Phys. Status Solidi B 2021, 200494)

  8. Disorder by design: A data-driven approach to amorphous semiconductors without total-energy functionals
    [D. K. Limbu, S. R. Elliott, R. Atta-Fynn and P. Biswas, Accepted in Scientific Reports (Springer Nature)]

  9. Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: A first-principles study
    [P.Biswas, D. Paudel, R.Atta-Fynn and S. R. Elliott, Nanoscale 2019, doi.org/10.1039/C9NR08209C]

  10. Structural properties of amorphous graphene: A joint Monte Carlo and particle-swarm approach
    Basu Oli, Dil Limbu and Parthapratim Biswas
    (Appeared in Proceedings of International Conference on Physics, Mandalay 2018 (ICMP2018), Myanmar)

  11. Atomistic simulation of nearly defect-free models of amorphous silicon: An
    information-based approach
    D. K. Limbu, R. Atta-Fynn and P. Biswas
    [MRS Advance, 4, 87 (2019), arXiv:1901.08620]

  12. First principles modeling of structural, electronic and vibrational properties of
    Ni40-Pd40-P20 bulk metallic glass
    R. Atta-Fynn, D. A. Drabold, and P. Biswas
    (Journal of Noncrystalline Solids X, In press.)

  13. Information-driven inverse approach to disordered solids: applications to amorphous silicon
    D. K. Limbu, R. Atta-Fynn, D. A. Drabold, S. R. Elliot, and P. Biswas
    [Physical Review Materials 2, 115602, (2018)]

  14. Hyperuniformity and static structure factor in amorphous silicon in the
    infinite-wavevector limit
    D. Dahal, R. Atta-Fynn, S. R. Elliott and P. Biswas
    (Accepted in J. of Physics: Conference series)

  15. Effect of low-temperature annealing on void-related microstructure
    in amorphous silicon: A computational study
    D. Paudel, R. Atta-Fynn, D. A. Drabold and P. Biswas
    (Accepted in J. of Phys.: Conference Series)

  16. Ab initio density-functional studies of 13-atom Cu and Ag clusters
    D. K. Limbu, M. U. Madueke, R. Atta-Fynn, D. A. Drabold and P. Biswas
    (Accepted in J. of Phys.: Conference Series)

  17. Spatial projection of electronic conductivity, the example of conducting bridge computer memory
    (K. Prasai, P. Biswas, K. Subedi, and D. A. Drabold)
    (Rapid Research Letters, Physica Status Solidi, April 2018)
    https://doi.org/10.1002/pssr.201800238

  18. Amorphous graphene: a constituent part of low density amorphous carbon
    B. Bhattarai, P. Biswas, R. Atta-Fynn, and D. A. Drabold
    (Accepted in Physical Chemistry and Chemical Physics, DOI:10.1039/c8cp0254b, April 2018)

  19. Nearly defect-free continuous random networks of amorphous silicon: A
    molecular-dynamical approach
    R. Atta-Fynn and P. Biswas
    (Accepted in Journal of Chemical Physics)

  20. Small-angle X-ray scattering in amorphous silicon: A computational study
    D. Paudel, R. Atta-Fynn, D. A. Drabold, S. R. Elliott, and P. Biswas
    (Accepted in Phys. Rev. B)

  21. Large and realistic models of amorphous silicon
    D. Ingram, B. Bhattarai, P. Biswas, and D. A. Drabold
    (Accepted in Journal of Non-crystalline Solids, April 2018)

  22. Structure of transition metal clusters: A force-biased Monte Carlo approach approach
    D. K. Limbu and P. Biswas
    (Journal of Physics: Conference Series, 012010, 921, 2017)

  23. First Principles computation of vibrational decay and lifetimes in a-Si:H and a-Si:D R. Atta-Fynn, D. A. Drabold, S. R. Elliott, and P. Biswas
    (Phys. Rev. B 95, 104205 (2017))

  24. Structural properties of transition-metal clusters via force-biased Mone Carlo and ab initio calculations: A comparative study
    D. K. Limbu, R. Atta-Fynn, D. A. Drabold, S. R. Elliott, and P. Biswas
    (Phys. Rev. B 96, 174208, (2017))

  25. Morphology and Number Density of Voids in Hydrogenated Amorphous Silicon: An Ab Initio Study
    Parthapratim Biswas, Durga Paudel, Raymond Atta-Fynn, David Drabold and Stephen R. Elliott
    (Physical Review Applied 7, 024013 (2017))

  26. Realistic inversion of diffraction data for an amorphous solid: The case of amorphous silicon
    Anup Pandey, Parthapratim Biswas, Bishal Bhattarai, and David Drabold
    [Physical Review B 94, 235208 (2016)]

  27. Metadynamical approach to the generation of amorphous structures: The case of a-Si:H
    Parthapratim Biswas, Raymond Atta-Fynn and Stephen R. Elliott
    [Physical Review B 93, 184202 (2016)]

  28. Electronically designed amorphous carbon and silicon
    K. Prasai, P. Biswas, and D. A. Drabold
    Physica Status Solidi A 213, 1653 (2016)]

  29. Inversion of diffraction data for amorphous silicon
    A. Pandey, P. Biswas, and D. A. Drabold
    [Science Reports 6, 33731, (2016)]

  30. Electrons and Phonons in Amorphous Semiconductors
    Kiran Prasi, Parthapratim Biswas, and David Drabold
    [Topical Review in Semicon. Sci. Tech. 31 073002 (2016)]

  31. Force-enhanced atomic relaxation: A novel approach to structural modeling
    Anup Pandey, Parthapratim Biswas, and David Drabold
    [Physical Review B 92, 155205 (2015)]

  32. Nanoscale structure of voids in hydrogenated amorphous silicon
    Parthapratim Biswas and Stephen Elliott
    [J. Phys.: Condens. Matter 27, 435201 (2015)]

  33. Sculpting the band gap: A computational approach
    Kiran Prasi, Parthapratim Biswas and David Drabold
    [Science Reports 5, 15522, (2015)]


    In preparation/To be submitted



    In preparation


  34. Density reconstruction as an entropy optimization problem: A differential-evolution approach (P. Biswas et al.)